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1

Nanoporous wire-like superstructure of silicon and silicon/germanium solid solution

A.I Klimovskaya, I.V Prokopenko, S.V Svechnikov, I.P Ostrovskii, A.K Gutakovsky, Yu.A Nastaushev, A.L Aseev

Journal:

Materials Science and Engineering: C

Year:

2002

Language:

english

File:

PDF, 444 KB

english, 2002

2

The initial stages of heteroepitaxy from the liquid phase at a low misfit: InGaAsP on GaAs

Yu.B. Bolkhovityanov, V.I. Yudaev, A.K. Gutakovsky

Journal:

Thin Solid Films

Year:

1986

Language:

english

File:

PDF, 3.37 MB

english, 1986

3

Study of the growth mechanism of modulated structures in the InAsGaAs system

Yu.O. Kanter, A.K. Gutakovsky, A.A. Fedorov, M.A. Revenko, S.V. Rubanov, S.I. Stenin

Journal:

Thin Solid Films

Year:

1988

Language:

english

File:

PDF, 747 KB

english, 1988

4

Growth, structure and luminescence properties of multilayer Si/β-FeSi2NCs/Si/…/Si nanoheterostructures

Nikolay G. Galkin, Evgeniy A. Chusovitin, Timur S. Shamirsaev, Anton K. Gutakovski, Alexander V. Latyshev

Journal:

Thin Solid Films

Year:

2011

Language:

english

File:

PDF, 730 KB

english, 2011

5

Ge and GexSi1 − x islands formation on GexSi1 − x solid solution surface

A.I. Nikiforov, V.A. Timofeev, S.A. Teys, A.K. Gutakovsky, O.P. Pchelyakov

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 537 KB

english, 2012

6

Evolution of silicon nanoclusters and hydrogen in SiNx:H films: Influence of high hydrostatic pressure under annealing

V.A. Volodin, K.O. Bugaev, A.K. Gutakovsky, L.I. Fedina, M.A. Neklyudova, A.V. Latyshev, A. Misiuk

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 1.29 MB

english, 2012

7

[Novosibirsk State Tech. Univ Siberian Russian Student Workshop and Tutorials on Electron Devices and Materials - Novosibirsk, Russia (19-21 Sept. 2000)] Siberian Russian Student Workshops and Tutorials on Electron Devices and Materials (Cat. No.00EX416) - Synthesis of MoS/sub 2/ nanostructures from nano-size powder by thermal annealing

Berdinsky, A.S., Chadderton, L.T., Gutakovsky, A.K., Fedorov, V.E., Chen, Y.

Year:

2000

Language:

english

File:

PDF, 730 KB

english, 2000

8

Investigation of Multilayer Silicon Structures with Buried Iron Silicide Nanocrystallites: Growth, Structure, and Properties

Galkin, N. G., Goroshko, D. L., Polyarnyi, V. O., Chusovitin, E. A., Korobtsov, V. V., Balashev, V. V., Khang, Y., Dozsa, L., Gutakovsky, A. K., Latyshev, A. V., Shamirzaev, T. S., Zhuravlev, K. S.

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2008

Language:

english

File:

PDF, 16.33 MB

english, 2008

9

Self-Assembled Islands in the (Ga,Al)As/InAs Heteroepitaxial System Studied by Raman Spectroscopy

D.A. Tenne, V.A. Haisler, A.K. Bakarov, A.I. Toropov, A.K. Gutakovsky, A.P. Shebanin, D.R.T. Zahn

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 116 KB

english, 2001

10

Effect of buffer layers on the dislocation structure of heteroepitaxial systems

Dr. Yu. B. Bolkhovityanov, Yu. D. Vaulin, A. K. Gutakovsky, S. I. Stenin, V. I. Yudaev

Journal:

Crystal Research and Technology

Year:

1981

Language:

english

File:

PDF, 742 KB

english, 1981

11

Melt Growth of CdTe Crystals and Transmission Electron Microscopic Investigations of their Grain Boundaries

I. V. Sabinina, A. K. Gutakovski, T. I. Milenov, N. N. Lyakh, Y. O. Sidorov, M. M. Gospodinov

Journal:

Crystal Research and Technology

Year:

1991

Language:

english

File:

PDF, 309 KB

english, 1991

12

Defect formation during growth of CdTe(111) and HgCdTe films by molecular beam epitaxy

I.V. Sabinina, A.K. Gutakovsky, Yu.G. Sidorov, S.A. Dvoretsky, V.D. Kuzmin

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 1.00 MB

english, 1992

13

Nanoscale engineering using controllable formation of ultra-thin cracks in heterostructures

V.Ya. Prinz, V.A. Seleznev, V.A. Samoylov, A.K. Gutakovsky

Journal:

Microelectronic Engineering

Year:

1996

Language:

english

File:

PDF, 571 KB

english, 1996

14

HREM of epitaxial layers in the InAs/GaAs system

V.Yu. Karasev, N.A. Kiselev, E.V. Orlova, M.A. Gribelyuk, A.K. Gutakovsky, Yu.O. Kanter, S.M. Pintus, S.V. Rubanov, S.I. Stenin, A.A. Fedorov

Journal:

Ultramicroscopy

Year:

1991

Language:

english

File:

PDF, 1.43 MB

english, 1991

15

Preparation of TEM samples from compound semiconductors by chemomechanical polishing

I.V Sabinina, A.K Gutakovsky

Journal:

Ultramicroscopy

Year:

1992

Language:

english

File:

PDF, 658 KB

english, 1992

16

Nature of V-shaped defects in HgCdTe epilayers grown by molecular beam epitaxy

I.V. Sabinina, A.K. Gutakovsky, Yu.G. Sidorov, A.V. Latyshev

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 725 KB

english, 2005

17

Germanium nanoislands formation on silicon oxide surface by molecular beam epitaxy

A.I. Nikiforov, V.V. Ulyanov, O.P. Pchelyakov, S.A. Teys, A.K. Gutakovsky

Journal:

Materials Science in Semiconductor Processing

Year:

2005

Language:

english

File:

PDF, 386 KB

english, 2005

18

The influence of elastic strains on the growth and properties of vertically ordered Ge “hut”-clusters

A.I. Nikiforov, V.V. Ulyanov, S.A. Teys, A.K. Gutakovsky, O.P. Pchelyakov

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 187 KB

english, 2008

19

Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(0 0 1)

A.K Gutakovsky, A.V Katkov, M.I Katkov, O.P Pchelyakov, M.A Revenko

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 122 KB

english, 1999

20

Cleavage of thin films for X-HREM study of interface quality in heterostructures

A.B Vorob′ev, A.K Gutakovsky, V.Ya Prinz

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 541 KB

english, 2000

21

Ellipsometry and microscopy study of nanocrystalline Si:H layers formed by high dose implantation of silicon

V.P Popov, I.V Antonova, A.K Gutakovsky, E.V Spesivtsev, I.I Morosov

Journal:

Materials Science and Engineering: B

Year:

2000

Language:

english

File:

PDF, 837 KB

english, 2000

22

Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays

V.Ya Prinz, V.A Seleznev, A.K Gutakovsky, A.V Chehovskiy, V.V Preobrazhenskii, M.A Putyato, T.A Gavrilova

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2000

Language:

english

File:

PDF, 502 KB

english, 2000

23

MBE growth of vertically ordered Ge quantum dots on Si

A. I. Nikiforov, V. V. Ulyanov, S. A. Teys, A. K. Gutakovsky, O. P. Pchelyakov, A. I. Yakimov, A. Fonseca, J. P. Leitão, N. A. Sobolev

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 315 KB

english, 2007

24

Structural changes of MoS2nano-powder in dependence on the annealing temperature

A.S. Berdinsky, L.T. Chadderton, J.B. Yoo, A.K. Gutakovsky, V.E. Fedorov, L.N. Mazalov, D. Fink

Journal:

Applied Physics A: Materials Science & Processing

Year:

2005

Language:

english

File:

PDF, 1.29 MB

english, 2005

25

Silicon layers atop iron silicide nanoislands on Si(100) substrate: Island formation, silicon growth, morphology and structure

N.G. Galkin, D.L. Goroshko, V.O. Polyarnyi, E.A. Chusovitin, W.J. Park, Y.S. Park, Y. Khang, A.K. Gutakovsky, A.V. Latyshev

Journal:

Thin Solid Films

Year:

2007

Language:

english

File:

PDF, 907 KB

english, 2007

26

Stress relaxation by generation of L-shape misfit dislocations in (001) heterostructures with diamond and sphalerite lattices

A.V. Kolesnikov, A.P. Vasilenko, E.M. Trukhanov, A.K. Gutakovsky

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 401 KB

english, 2000

27

Formation of ultrasmall germanium nanoislands with a high density on an atomically clean surface of silicon oxide

A. I. Nikiforov, V. V. Ul’yanov, O. P. Pchelyakov, S. A. Teys, A. K. Gutakovsky

Journal:

Physics of the Solid State

Year:

2005

Language:

english

File:

PDF, 124 KB

english, 2005

28

Spontaneous composition modulation during CdxHg1−xTe(301) molecular beam epitaxy

I. V. Sabinina, A. K. Gutakovsky, Yu. G. Sidorov, A. V. Latyshev

Journal:

Year:

2011

Language:

english

File:

PDF, 688 KB

english, 2011

29

Role of the dislocation screw component in the formation of the dislocation structure in Ge- and Si-based semiconductor heterosystems

E. M. Trukhanov, A. V. Kolesnikov, A. S. Ilin, A. Yu. Krasotin, A. P. Vasilenko, A. S. Deryabin, M. M. Kachanova, A. K. Gutakovsky

Journal:

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

Year:

2007

Language:

english

File:

PDF, 411 KB

english, 2007

30

Defects in the crystal structure of CdxHg1 −xTe layers grown on the Si (310) substrates

M. V. Yakushev, A. K. Gutakovsky, I. V. Sabinina, Yu. G. Sidorov

Journal:

Year:

2011

Language:

english

File:

PDF, 1.10 MB

english, 2011

31

Implantation of P ions in SiO2 layers with embedded Si nanocrystals

G.A Kachurin, S.G Cherkova, V.A Volodin, V.G Kesler, A.K Gutakovsky, A.G Cherkov, A.V Bublikov, D.I Tetelbaum

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2004

Language:

english

File:

PDF, 448 KB

english, 2004

32

Properties of silicon oversaturated with implanted hydrogen

V.P Popov, I.E Tyschenko, L.N Safronov, O.V Naumova, I.V Antonova, A.K Gutakovsky, A.B Talochkin

Journal:

Thin Solid Films

Year:

2002

Language:

english

File:

PDF, 684 KB

english, 2002

33

Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing

G.A. Kachurin, I.E. Tyschenko, K.S. Zhuravlev, N.A. Pazdnikov, V.A. Volodin, A.K. Gutakovsky, A.F. Leier, W. Skorupa, R.A. Yankov

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1997

Language:

english

File:

PDF, 332 KB

english, 1997

34

Light particle irradiation effects in Si nanocrystals

G.A. Kachurin, M.-O. Ruault, A.K. Gutakovsky, O. Kaı̈tasov, S.G. Yanovskaya, K.S. Zhuravlev, H. Bernas

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1999

Language:

english

File:

PDF, 273 KB

english, 1999

35

Novel technique for fabrication of one- and two-dimensional systems

V.Ya. Prinz, V.A. Seleznev, A.K. Gutakovsky

Journal:

Surface Science

Year:

1996

Language:

english

File:

PDF, 303 KB

english, 1996

36

High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy

A.A. Lyamkina, D.S. Abramkin, D.V. Dmitriev, D.V. Gulyaev, A.K. Gutakovsky, S.P. Moshchenko, T.S. Shamirzaev, A.I. Toropov, K.S. Zhuravlev

Journal:

Journal of Crystal Growth

Year:

2011

Language:

english

File:

PDF, 525 KB

english, 2011

37

Optical vibrational modes in (Cd, Pb, Zn)S quantum dots embedded in Langmuir–Blodgett matrices

A.G Milekhin, L.L Sveshnikova, S.M Repinsky, A.K Gutakovsky, M Friedrich, D.R.T Zahn

Journal:

Thin Solid Films

Year:

2002

Language:

english

File:

PDF, 477 KB

english, 2002

38

Formation of iron and iron silicides on silicon and iron surfaces. Role of the deposition rate and volumetric effects

Gouralnik, A. S., Dotsenko, S. A., Galkin, N. G., Ivanov, V. A., Plotnikov, V. S., Pustovalov, E. V., Cherednichenko, A. I., Gutakovski, A. K., Neklyudova, M. A.

Journal:

Applied Physics A: Materials Science & Processing

Year:

2013

Language:

english

File:

PDF, 585 KB

english, 2013

39

Initial stage growth of GexSi1−xlayers and Ge quantum dot formation on GexSi1−xsurface by MBE

Aleksandr I Nikiforov, Vyacheslav A Timofeev, Serge A Teys, Anton K Gutakovsky, Oleg P Pchelyakov

Journal:

Nanoscale Research Letters

Year:

2012

Language:

english

File:

PDF, 377 KB

english, 2012

40

Brief observe on iron silicide growth on amorphous silicon

Gouralnik, A. S., Lin, Ko-Wei, Dotsenko, S. A., Galkin, N. G., Plotnikov, V. S., Pustovalov, E. V., Cherednichenko, A. I., Vavanova, S. V., Shevlyagin, A. V., Gutakovski, A. K., Neklyudova, M. A.

Journal:

Physica status solidi

Year:

2013

Language:

english

File:

PDF, 344 KB

english, 2013

41

Raman study of self-assembled GaAs and AlAs islands embedded in InAs

Tenne, D. A., Haisler, V. A., Toropov, A. I., Bakarov, A. K., Gutakovsky, A. K., Zahn, D. R. T., Shebanin, A. P.

Journal:

Physical Review B

Year:

2000

Language:

english

File:

PDF, 355 KB

english, 2000

42

Formation of Mg silicides on amorphous Si. Origin and role of high pressure in the film growth

Dotsenko, S.A., Gouralnik, A.S., Galkin, N.G., Galkin, K.N., Gutakovski, A.K., Neklyudova, M.A.

Journal:

Materials Chemistry and Physics

Year:

2014

Language:

english

File:

PDF, 1.05 MB

english, 2014

43

Interface corrugation in GaAs/AlAs (311)A superlattices

Vorob’ev, A. B., Gutakovsky, A. K., Prinz, V. Ya., Preobrazhenskii, V. V., Putyato, M. A.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 669 KB

english, 2000

44

[IEEE 6th Russian-Korean International Symposium on Science and Technology - Novosibirsk, Russia (24-30 June 2002)] Proceedings 6th Russian-Korean International Symposium on Science and Technology. KORUS-2002 (Cat. No.02EX565) - Research on annealing temperature in the process of MoS/sub 2/ nanostructure synthesis from nanoscale powder

Berdinsky, A.S., Chadderton, L.T., Gutakovsky, A.K., Mazalov, L.N., Fedorov, V.E., Fink, D.

Year:

2002

Language:

english

File:

PDF, 336 KB

english, 2002

45

Fabrication of conducting GeSi/Si micro- and nanotubes and helical microcoils

Golod, S V, Prinz, V Ya, Mashanov, V I, Gutakovsky, A K

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 238 KB

english, 2001

46

VARIATION OF IN-PLANE LATTICE CONSTANT OF Si/Ge/Si HETEROSTRUCTURES WITH Ge QUANTUM DOTS

NIKIFOROV, ALEXANDER, ULYANOV, VLADIMIR, SHAIDUK, ROMAN, TEYS, SERGEY, GUTAKOVSKY, ANTON, PCHELYAKOV, OLEG

Journal:

International Journal of Nanoscience

Year:

2007

Language:

english

File:

PDF, 195 KB

english, 2007

47

Electroluminescent 1.5-μm light-emitting diodes based onp+-Si/NC β-FeSi2/n-Si structures

Shamirzaev, T. S., Galkin, N. G., Chusovitin, E. A., Goroshko, D. L., Shevlyagin, A. V., Gutakovski, A. K., Saranin, A. A., Latyshev, A. V.

Journal:

Year:

2015

Language:

english

File:

PDF, 1.55 MB

english, 2015

48

Crystallization of Amorphous Si Nanoclusters in SiOx Films Using Femtosecond Laser Pulse Annealings

Korchagina, T. T., Gutakovsky, A. K., Fedina, L. I., Neklyudova, M. A., Volodin, V. A.

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2012

Language:

english

File:

PDF, 5.35 MB

english, 2012

49

A technique for fabricating InGaAs/GaAs nanotubes of precisely controlled lengths

Prinz, V Ya, Chekhovskiy, A V, Preobrazhenskii, V V, Semyagin, B R, Gutakovsky, A K

Journal:

Year:

2002

Language:

english

File:

PDF, 218 KB

english, 2002

50

Quantum-Sized Silicon Precipitates in Silicon-Implanted and Pulse-Annealed Silicon Dioxide Films: Photoluminescence and Structural Transformations

Tyschenko, I. E., Kachurin, G. A., Zhuravlev, K. S., Pazdnikov, N. A., Volodin, V. A., Gutakovsky, A. K., Leier, A. F., Fröb, H., Leo, K., Böime, T., Rebohle, L., Yankov, R. A., Skorupa, W.

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 408 KB

english, 1996

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